(a) boron and (b) phosphorus distributions in the final silicon portion for (a) 1, (b) 10 and (c) 60 mm/h crystallization rate.
Part of: Gonik MA, Baltaretu F (2018) Problem of attaining constant impurity concentration over ingot height. Modern Electronic Materials 4(2): 41-51. https://doi.org/10.3897/j.moem.4.2.38536