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Crystal growth setup at (a) crucible pulling stage relative to submerged AHP heater and (b) at the end after stopping, and (c) domain schematic. |
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| Part of: Gonik MA, Baltaretu F (2018) Problem of attaining constant impurity concentration over ingot height. Modern Electronic Materials 4(2): 41-51. https://doi.org/10.3897/j.moem.4.2.38536 |