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  • ContentsContents
  • Article InfoArticle Info
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  • Article title
  • Abstract
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  • 1. Introduction
  • 2. Literature survey
  • 3. GaN MOSFET technology
    • 3.1. Fundamentals of Gallium nitride (GaN)
    • 3.2. Gallium nitride metal oxide semiconductor
  • 4. Dopant profile testing
    • 4.1. Purpose of dopant testing
    • 4.2. Techniques and methodology
    • 4.3. Significance of GaN MOSFET
  • 5. Mode of dopant profile testing
    • 5.1. Selection of GaN MOSFET samples and testing procedure
    • 5.2. Experimental setup and conditions
  • 6. Result and analysis
    • 6.1. Presentation of dopant profile testing data
    • 6.2. Junction characteristics by C–V test
    • 6.3. Variability and uniformity testing data
  • 7. Conclusion
  • 8. Future work
  • Acknowledgement
  • Conflict of interest
  • References
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