(a) CDW conductive state switching sequence in three-electrode cell and (b) scanning electron microscopy structure image. (a) G gate, D drain, S source, controlling voltages Vd = 8.5 V, Vt1 = –4.70 V, Vt2 = –4,72 V and Vg = –8 V, 0 V and –5 V at each stage, respectively. Images copied from [127] under license CC BY 4.0

 
 
  Part of: Kislyuk AM, Kubasov IV, Temirov AA, Turutin AV, Shportenko AS, Kuts VV, Malinkovich MD (2023) Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate. Modern Electronic Materials 9(4): 145-161. https://doi.org/10.3897/j.moem.9.4.116646