Estimation of the activation energy in the Ag/SnSe/Ge2Se3/W self-directed channel memristor


	I-V curves changes induced by alterations in the switching frequency within the SDC memristor at (a) 22 °C, (b) 50 °C, and (c) 75 °C

Part of: Aleshin AN, Ruban OA (2023) Estimation of the activation energy in the Ag/SnSe/Ge₂Se₃/W self-directed channel memristor. Modern Electronic Materials 9(3): 115-122. https://doi.org/10.3897/j.moem.9.3.113245