Initial stages of Ag+ ion agglomeration within the Ge2Se3 amorphous matrix: (a) unperturbed short-range order of the amorphous matrix; (b) formation of a microcavity when an Au atom substitutes a Ge atom in one of the Ge–Ge dimers; (c) accumulation of Ag+ ions around the microcavity. Arrows indicate the directions of movement of Ag+ ions near the microcavity from neighboring (parallel) regions of the amorphous matrix. The figure was generated by the authors using data sourced from [10]

 
 
  Part of: Aleshin AN, Ruban OA (2023) Estimation of the activation energy in the Ag/SnSe/Ge2Se3/W self-directed channel memristor. Modern Electronic Materials 9(3): 115-122. https://doi.org/10.3897/j.moem.9.3.113245